Utilizing PLAD (plasma doping) for next-generation super-junction power devices

This paper introduces a novel Super Junction (SJ) design enabled by VIISta ® PLAD ™ to address the scaling challenges of traditional SJ structures in power semiconductor devices. For the first time, this work realizes the SJ concept using the plasma doping (PLAD) and demonstrates the electrical result in the power device field. Spreading Resistance Profiling and Secondary Ion Mass Spectrometry analysis demonstrated PLAD’s capability to create shallow (0.1 μm) implant depth and tune dopant profiles along the sidewalls of the trench with High Aspect Ratios (HAR). Electrical testing of fabricated devices showed a Breakdown Voltage of 145 V, a significant improvement over non-PLAD samples. PLAD’s ability to achieve shallow junctions and control dopant profiles with HAR trenches offers a promising pathway for scaling down SJ devices and simplifying fabrication processes.