Chew Beng Soh

Assoc Professor (Built environment and design; Engineering; Physical sciences)

Singapore

Publications

  • Development of (Zr,Mn) doped X-type hexaferrites for high frequency EMI shielding applications
  • Plasmonic enhanced emission from nanostructed embedded InGaN/GaN MQWs with silver nanoparticles
  • Effect of resistivity of ITO thin film when used in transparent checkerboard surfaces for RCS reduction
  • Absorptive protective padding with electrospinned polyester fibers with hydrogel matrix
  • Comparison of Tensile and Impact Absorption properties of Bio-Inspired Helicoidal stacked with Cross-Ply Stacked Carbon Fiber Laminate
  • Optically transparent titanium dioxide based coating with anti-reflectance properties in the GigaHertz frequency spectrum for drones
  • Intelligent Street Lighting for Smart Cities
  • Alcohol Sensing Properties of Titanium Dioxide and Barium Nitrate Oxide Microstructure Device
  • Reduction in EMI with BaTiO3 and Fe3O4 Thin Film grown by UBM Sputtering
  • Optically transparent film of BaTiO3 – TiO2 and Fe3O4 – TiO2 on acrylic substrate with water vapor treatment
  • Nanopore morphology in porous GaN template and its effect on the LEDs emission
  • Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence
  • Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
  • High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process
  • Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
  • Tapered and aperiodic silicon nanostructures with very low reflectance for solar hydrogen evolution
  • Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates
  • Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InN
  • Effect of Morphological and Structural Properties on SIMS Depth Profiles of InGaN/GaN Multiple Quantum Wells Grown on Sapphire by MOCVD
  • Regrowth of GaN on Strain-relief porous GaN template fabricated by Anodized Alumina Oxide mask
  • Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs
  • Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes
  • Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
  • Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN
  • Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN
  • The effects of cap layers on electrical properties of indium nitride films
  • Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
  • Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs
  • Dependence of Substrate Orientation and Etching Conditions on the Formation of Si Nanowires
  • Stress relaxed nanoepitaxy GaN for growth of phosphor-free indium-rich nanostructures incorporated in apple-white LEDs
  • Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures
  • Enhanced luminescence efficiency due to carrier localization in InGaN∕GaN heterostructures grown on nanoporous GaN templates
  • Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs
  • Comparative luminescence properties of ZnO nanorods grown on various substrates by low-temperature metalorganic chemical vapour deposition
  • Exciton recombination in ZnO nanorods grown on GaN/sapphire template
  • Quantum dots excited InGaN/GaN phosphor-free white LEDs
  • Emission characteristics of ZnO nanorods on nanosilicon-on-insulator: competition between exciton–phonon coupling and surface resonance effect
  • Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
  • Novel tunable phosphor-free white III-nitride light emitting diodes based on indium rich InGaN nanostructures
  • Luminescence and vibrational properties of erbium-implanted nanoporous GaN
  • Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
  • Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth
  • Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth
  • Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
  • Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures
  • Influence of Buffer Layer on Structural and Optical Properties of ZnO Nanorods on Glass Substrates
  • Voltage tunable wavelength LEDs
  • Deep levels associated with dislocation annihilation by Al pre-seeding and silicon delta doping in GaN grown on Si(111) substrates
  • Enhancement of Erbium Incorporation with Implantation into Nanoporous GaN
  • Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth
  • Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
  • Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
  • High Quality GaN Grown from a Nanoporous GaN Template
  • Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1−x−yN∕GaN interface
  • The influence of V defects on luminescence properties of AlInGaN quaternary alloys
  • Effects of 248nm excimer laser irradiation on the properties of Mg-doped GaN
  • Raman scattering from nanopatterned silicon surface prepared by low-energy -ion irradiation
  • Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
  • Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion method
  • Anomalous optical transitions in AlInGaN/GaN heterostructures grown by metalorganic chemical vapor deposition
  • Assignment of deep levels causing yellow luminescence in GaN
  • Identification of deep levels in GaN associated with dislocations
  • Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
  • Study of electrically active defects in n-GaN layer
  • Inverted hexagonal pits formation in AlInGaN epilayer
  • Identification of deep levels in π-GaN epilayers
  • DLTS characterisation of InGaAlP films grown using different V/III ratios
  • Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS

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